data sheet IPB120N04S4L-02 optimos tm -t2 power-transistor features ? n-channel logic level - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 120 a t c =100c, v gs =10v 2) 120 pulsed drain current 2) i d,pulse t c =25c 480 avalanche energy, single pulse 2) e as i d =60a 480 mj avalanche current, single pulse i as - 120 a gate source voltage v gs - +20/-16 v power dissipation p tot t c =25c 158 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds 40 v r ds(on),max 1.7 m i d 120 a product summary pg-to263-3-2 type package marking IPB120N04S4L-02 pg-to263-3- 4n04l02 r ev. 1.0 page 1 2013-06-03
data sheet IPB120N04S4L-02 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 0.95 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =110a 1.2 1.7 2.2 zero gate voltage drain current i dss v ds =40v, v gs =0v -0.051a v ds =18v, v gs =0v, t j =85c 2) -120 gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =4.5v, i d =50a -1.92.3 m v gs =10 v, i d =100 a -1.41.7 values r ev. 1.0 page 2 2013-06-03
data sheet IPB120N04S4L-02 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 11200 14560 pf output capacitance c oss - 1900 2470 reverse transfer capacitance c rss - 95 220 turn-on delay time t d(on) -16-ns rise time t r -16- turn-off delay time t d(off) -80- fall time t f -70- gate char g e characteristics 2) gate to source charge q gs -3242nc gate to drain charge q gd -1637 gate charge total q g - 143 190 gate plateau voltage v plateau -2.9-v reverse diode diode continous forward current 2) i s - - 120 a diode pulse current 2) i s,pulse - - 480 diode forward voltage v sd v gs =0v, i f =100a, t j =25c -0.91.3v reverse recovery time 2) t rr v r =20v, i f =50a, d i f /d t =100a/s -65-ns reverse recovery charge 2) q rr -85-nc 1) current is limited by bondwire; with an r thjc = 0.95k/w the chip is able to carry 290a at 25c. t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =20v, v gs =10v, i d =120a, r g =3.5 v dd =32v, i d =120a, v gs =0 to 10v 2) defined by design. not subject to production test. r ev. 1.0 page 3 2013-06-03
data sheet IPB120N04S4L-02 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 i d [a] v ds [v] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 z thjc [k/w] t p [s] 0 25 50 75 100 125 150 175 0 50 100 150 200 p tot [w] t c [ c] 0 20 40 60 80 100 120 140 0 50 100 150 200 i d [a] t c [ c] r ev. 1.0 page 4 2013-06-03
data sheet IPB120N04S4L-02 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = f( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 100 a; v gs = 10 v parameter: t j 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] 3 v 3.5 v 4 v 4.5 v 10 v 0 60 120 180 240 300 360 420 480 01234 i d [a] v ds [v] 3 v 3.5 v 4 v 4.5 v 10 v 1 3 5 7 9 11 0 120 240 360 480 r ds(on) [m ] i d [a] -55 c 25 c 175 c 0 60 120 180 240 300 360 420 480 12345 i d [a] v gs [v] r ev. 1.0 page 5 2013-06-03
data sheet IPB120N04S4L-02 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] 110 a 1100 a 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 2 10 3 10 4 10 5 0 5 10 15 20 25 30 c [pf] v ds [v] 10 1 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] r ev. 1.0 page 6 2013-06-03
data sheet IPB120N04S4L-02 13 avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 120 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 35 37 39 41 43 45 -55 -15 25 65 105 145 v br(dss) [v] t j [ c] 8 v 32 v 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 v gs [v] q gate [nc] 60 a 30 a 120 a 0 200 400 600 800 1000 25 75 125 175 e as [mj] t j [ c] r ev. 1.0 page 7 2013-06-03
data sheet IPB120N04S4L-02 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2013 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.0 page 8 2013-06-03
data sheet IPB120N04S4L-02 revision history version revision 1.0 changes final data sheet date 03.06.2013 r ev. 1.0 page 9 2013-06-03
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